AGR19045EF

45 W, 1930 MHz-1990 MHz, PCS LDMOS RF, Power Transistor, SOP, 14.5 dB Power gain

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Price:: US $8.00~12.00 / piece [Get Latest Price]

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	US $8.00~12.00

PartNumber:: AGR19045EF

Brand:: TriQuint Semiconductor - TriQuint | Pack: SOP | D/C: 08+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-07-07

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Part Number:AGR19045EF
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Product Summary

The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication(GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.

Parametrics

AGR19045EF absolute maximum ratings: (1)Drain-source Voltage VDSS: 65 Vdc; (2)Gate-source Voltage VGS: –0.5, 15 Vdc; (3)Total Dissipation at TC = 25 ℃ PD: 115 W; (4)Derate Above 25 ℃: 0.67 W/℃; (5)Operating Junction Temperature TJ: 200 ℃; (6)Storage Temperature Range TSTG: –65, 150 ℃.

Features

AGR19045EF features: (1)High-reliability, gold-metalization process; (2)Low hot carrier injection (HCI) induced bias drift over 20 years.; (3)Internally matched; (4)High gain, efficiency, and linearity; (5)Integrated ESD protection; (6)Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW output power; (7)Large signal impedance parameters available.