Product Summary
The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication(GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
Parametrics
AGR19045EF absolute maximum ratings: (1)Drain-source Voltage VDSS: 65 Vdc; (2)Gate-source Voltage VGS: –0.5, 15 Vdc; (3)Total Dissipation at TC = 25 ℃ PD: 115 W; (4)Derate Above 25 ℃: 0.67 W/℃; (5)Operating Junction Temperature TJ: 200 ℃; (6)Storage Temperature Range TSTG: –65, 150 ℃.
Features
AGR19045EF features: (1)High-reliability, gold-metalization process; (2)Low hot carrier injection (HCI) induced bias drift over 20 years.; (3)Internally matched; (4)High gain, efficiency, and linearity; (5)Integrated ESD protection; (6)Device can withstand 10:1 voltage standing wave ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW output power; (7)Large signal impedance parameters available.
Diagrams
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AGR19045EF |
TriQuint Semiconductor |
Transistors RF MOSFET Power RF LDMOS Transistor |
Data Sheet |
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