Product Summary

The BSM75GAR120DN2 is an IGBT Power Module.

Parametrics

BSM75GAR120DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200V; (3)Gate-emitter voltage VGE: ± 20V; (4)Power dissipation per IGBT: 625W; (5)Chip temperature Tj: + 150℃; (6)Storage temperature Tstg: -40 to + 125℃; (7)Thermal resistance, chip case RthJC: ≤0.2 K/W; (8)Diode thermal resistance, chip case RthJCD: ≤ 0.5K/W; (9)Diode thermal resistance, chip-case,chopper RTHJCDC: ≤0.36K/W; (10)Insulation test voltage, t = 1min. Vis: 2500 Vac.

Features

BSM75GAR120DN2 features: (1)Single switch with chopper diode at collector; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM75GAR120DN2 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM75GAR120DN2
BSM75GAR120DN2
Infineon Technologies
IGBT Transistors 1200V 100A GAR CH
Data Sheet
0-1: $41.11
1-5: $39.05
5-10: $37.00
10-50: $34.70
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(USD)		 Quantity
BSM75GAL120DN2
BSM75GAL120DN2
Infineon Technologies
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Data Sheet
0-1: $34.32
1-10: $30.89
BSM75GAR120DN2
BSM75GAR120DN2
Infineon Technologies
IGBT Transistors 1200V 100A GAR CH
Data Sheet
0-1: $41.11
1-5: $39.05
5-10: $37.00
10-50: $34.70
BSM75GB120DLC
BSM75GB120DLC
Infineon Technologies
IGBT Modules 1200V 75A DUAL
Data Sheet
0-1: $43.16
1-10: $38.84
BSM75GB120DN2
BSM75GB120DN2
Infineon Technologies
IGBT Modules 1200V 75A DUAL
Data Sheet
0-1: $45.58
1-10: $41.02
BSM75GB120DN2_E3223
BSM75GB120DN2_E3223
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IGBT Modules N-CH 1.2KV 105A
Data Sheet
0-8: $41.48
8-10: $39.89
BSM75GB120DN2_E3223c-Se
BSM75GB120DN2_E3223c-Se
Infineon Technologies
IGBT Modules IGBT 1200V 75A
Data Sheet
0-6: $67.20
6-10: $60.60