Product Summary
The CNY17-4 is a Photocoupler GaAs Ired & Photo-Transistor. It consists of a gallium arsenide infrared emitting diode coupled with a silicon photo transistor in a dual in-line package.
Parametrics
CNY17-4 absolute maximum ratings: (1)Forward current IF: 60mA; (2)Forward current derating: 0.8mA/℃; (3)Peak forward current: 3A; (4)Power dissipation: 100mW; (5)Power dissipation derating: 1.33mW/℃; (6)Reverse voltage VR: 6V; (7)Collector-emitter voltage: 70V; (8)Collector-base voltage: 70V; (9)Emitter-collector voltage: 7V; (10)Collector current IC: 100mA; (11)Power dissipation PC: 150mW; (12)Power dissipation derating: 2.0mW/℃; (13)Storage temperature Tstg: -55℃ to 150℃; (14)Operating temperature: -55℃ to 100℃; (15)Lead soldering temperature (10s): 260℃; (16)Total package dissipation: 200mW.
Features
CNY17-4 features: (1) Small package size and low cost; (2) Fast switching speeds: 5μs (typ.); (3) High DC current transfer ratio: CTR (IF=10mA, VCE=5V):160 to 320%; (4) High isolation resistance: 1011Ω (typ.); (5) High isolation voltage: 4400V (min.).
Diagrams
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![]() CNY17-4 |
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![]() CNY17-4-060E |
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![]() CNY17-4-300E |
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![]() CNY17-4-360E |
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![]() CNY17-4-500E |
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![]() CNY17-4-560E |
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![]() CNY17-4M |
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![]() CNY17-4S |
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