(China (Mainland))
Product Summary
The CY62167EV30LL-45BVXI is a high performance CMOS static RAM organized as 1M words by 16 bits or 2M words by 8 bits. This CY62167EV30LL-45BVXI features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The CY62167EV30LL-45BVXI also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling.
Parametrics
CY62167EV30LL-45BVXI absolute maximum ratings: (1)Storage temperature:–65℃ to + 150℃; (2)Ambient temperature with power applied:–55℃ to + 125℃; (3)Supply voltage to ground potential:–0.3V to 3.9V (VCC(max) + 0.3 V); (4)DC voltage applied to outputs in High Z state [5, 6]:–0.3V to 3.9V (VCC(max) + 0.3V); (5)DC input voltage [5, 6]:–0.3V to 3.9V (VCC(max) + 0.3V); (6)Output current into outputs (LOW): 20mA; (7)Static discharge voltage; (8)(MIL-STD-883, Method 3015): ＞2001 V; (9)Latch-up current: ＞200 mA.
Features
CY62167EV30LL-45BVXI features: (1)TSOP I package configurable as 1M×16 or 2M×8 SRAM; (2)Very high speed: 45ns; (3)Temperature ranges Industrial:–40℃ to +85℃; (4)Automotive-A:–40℃ to +85℃; (5)Wide voltage range: 2.20 V to 3.60 V; (6)Ultra-low standby power Typical standby current: 1.5μA; (7)Maximum standby current: 12μA; (8)Ultra-low active power Typical active current: 2.2mA at f = 1 MHz; (9)Easy memory expansion with CE1, CE2, and OE Features; (10)Automatic power-down when deselected; (11)CMOS for optimum speed and power; (12)Offered in Pb-free 48-ball VFBGA and 48-pin TSOP I packages.
Diagrams
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 CY62167EV30LL-45BVXI |
Cypress Semiconductor |
SRAM SLO 3V SUPER LO PWR 1MEGX16 SRAM IND |
Data Sheet |
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CY62167EV30LL-45BVXIT |
Cypress Semiconductor |
SRAM 3V SUPER LoPwr 1MEGX16 PbFree SRAM |
Data Sheet |
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