(China (Mainland))
Product Summary
The FZT849 is a NPN silicon planar high current (high performance) transistor.
Parametrics
FZT849 absolute maximum ratings: (1)Collector-Base Voltage VCBO: 80 V; (2)Collector-Emitter Voltage VCEO: 30 V; (3)Emitter-Base Voltage VEBO: 6 V; (4)Peak Pulse Current ICM: 20 A; (5)Continuous Collector Current IC: 7 A; (6)Power Dissipation at Tamb=25℃: Ptot 3 W; (7)Operating and Storage Temperature Range Tj:Tstg: -55 to +150℃.
Features
FZT849 features: (1)Extremely low equivalent on-resistance; RCE(sat)36mW at 5A; (2)7 Amp continuous collector current (20 Amp peak); (3)Very low saturation voltages; (4)Excellent gain charateristics specified upto 20 Amp; (5)Ptot =3 Watts.
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 FZT849 |
Other |
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Data Sheet |
Negotiable |
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FZT849TA |
Diodes Inc. |
Transistors Bipolar (BJT) NPN High Ct Low Sat |
Data Sheet |
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FZT849TC |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) NPN High Ct Low Sat |
Data Sheet |
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