(China (Mainland))
Product Summary
The 2MBI75N120 is an IGBT module. The device is suitable for High Power Switching, A.C. Motor Controls, D.C. Motor Controls and Uninterruptible Power Supply.
Parametrics
2MBI75N120 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 1200 V; (2)Gate -Emitter Voltage VGES: ± 20 V; (3)collector current, Continuous, IC: 75A; 1ms, IC PULSE: 150A; Continuous, -IC: 75A; 1ms, -IC PULSE: 150A; (4)Max. Power Dissipation, PC: 600 W; (5)Operating Temperature, Tj: +150℃; (6)Storage Temperature, Tstg: -40 to +125℃; (7)Isolation Voltage A.C. 1min, Vis: 2500 V.
Features
2MBI75N120 features: (1)Square RBSOA; (2)Low Saturation Voltage; (3)Less Total Power Dissipation; (4)Improved FWD Characteristic; (5)Minimized Internal Stray Inductance; (6)Overcurrent Limiting Function (4~5 Times Rated Current).
Diagrams
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 2MBI100N-060-03 |
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2MBI100NB-120 |
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Negotiable |
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2MBI100NC-120 |
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Negotiable |
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2MBI100NE-120 |
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Negotiable |
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2MBI100P-140 |
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Negotiable |
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2MBI100PC-140 |
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Negotiable |
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