(China (Mainland))
Product Summary
The 2SC2694 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications.
Parametrics
2SC2694 absolute maximum ratings: (1)VCBO, Collector to base voltage: 35V; (2)VEBO, Emitter to base voltage: 35V; (3)VCEO, Collector to emitter voltage: 17V; (4)lC, Collector current: 20A; (5)PC, Collector dissipation: Ta = 25℃: 5.5W; TC = 25℃: 140W; (6)TJ, Junction temperature: 175℃; (7)Tstg, Storage temperature: -55 to 175℃; (8)Rth-a, Thermal resistance, Junction to ambient: 27.2℃/W; (9)Rth-c, Thermal resistance, Junction to case: 1.07℃/W.
Features
2SC2694 features: (1)High power gain: Gpe≧6.7dB @VCC = 12.5V, PO = 70W, f = 175MHz; (2)Emitter ballasted construction and gold metallization for high reliability and good performances; (3)Low thermal resistance ceramic package with flange; (4)Ability of withstanding more than 20:1 load VSWR when operated at Vcc = 15.2V, P0 = 70W, f = 175MHz, Tc = 25℃; (5)Equivalent input/output series impedance: Zjn = 0.7 + j0.9Ω @PO = 70W, Vcc = 12.5V, f=175MHz, Zout = 1.2 - j0.3Ω.
Diagrams
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 2SC2000 |
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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