Product Summary
The BLV2047 is a NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. The applications of BLV2047 are: Common emitter class-AB operation for PCN (Personal Communication Networks) and PCS (Personal Communication Services) base station applications in the 1800 to 2000 MHz frequency range.
Parametrics
BLV2047 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 65 V; (2)VCEO collector-emitter voltage open base: 27 V; (3)VEBO emitter-base voltage open collector: 3 V; (4)IC collector current (DC): 10 A; (5)Ptot total power dissipation Tmb = 25 ℃: 270 W; (6)Tstg storage temperature: -65 to +150 ℃; (7)Tj operating junction temperature: 200 ℃.
Features
BLV2047 features: (1)Emitter ballasting resistors for optimum temperature profile; (2)Gold metallization ensures excellent reliability; (3)Internal input and output matching for easy design of wideband circuits; (4)AlN substrate package for environmental safety.
Diagrams
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BLV2047 |
Other |
Data Sheet |
Negotiable |
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BLV20 |
Advanced Semiconductor, Inc. |
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BLV2042 |
Other |
Data Sheet |
Negotiable |
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BLV2044 |
Other |
Data Sheet |
Negotiable |
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BLV2045N |
Other |
Data Sheet |
Negotiable |
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BLV2046 |
Other |
Data Sheet |
Negotiable |
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BLV2047 |
Other |
Data Sheet |
Negotiable |
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