Product Summary
The BSM150GB120DN2E3256 is an IGBT Power Module.
Parametrics
BSM150GB120DN2E3256 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage RGE = 20 kW: 1200 V; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 210 A at TC = 25 ℃, 150 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 420 A at TC = 25 ℃, 300 A at TC = 80 ℃; (6)Power dissipation per IGBT: 1250 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -55 to + 150 ℃; (9)Thermal resistance, chip case: ≤ 0.1 K/W; (10)Diode thermal resistance, chip case: ≤ 0.125; (11)Insulation test voltage, t = 1min.: 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11 mm.
Features
BSM150GB120DN2E3256 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Enlarged diode area; (4)Package with insulated metal base plate.
Diagrams
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Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
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Negotiable |
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BSM100GAR120DN2 |
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IGBT Transistors 1200V 100A DUAL |
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Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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