(China (Mainland))
Product Summary
The DT210N18KOF is a Phase Control Thyristor Module.
Parametrics
DT210N18KOF absolute maximum ratings: (1)repetitive peak forward off-state and reverse voltages: 1200 to 1400 V at Tvj = -40℃ to Tvj max; (2)non-repetitive peak forward off-state voltage: 1200 to 1400 V at Tvj = -40℃ to Tvj max; (3)non-repetitive peak reverse voltage: 1300 to 1500 V at vj = +25℃ to Tvj max; (4)maximum RMS on-state current: 410 A; (5)average on-state current: 210 A at TC = 85℃, 261 A at TC = 73℃; (6)surge current: 6600 A at Tvj = 25 ℃, tP = 10 ms, 5800 A at Tvj = Tvj max, tP = 10 ms; (7)I2t-value: 218000 A2s at Tvj = 25 ℃, tP = 10 ms, 168000 A2s at Tvj = Tvj max, tP = 10 ms.
Features
DT210N18KOF features: (1)mounting torque: Toleranz / Tolerance ± 15%: 5 Nm; (2)terminal connection torque: Toleranz / Tolerance ± 10%: 12 Nm; (3)control terminals: A 2,8 x 0,8; (4)weight: typ. 800 g; (5)creepage distance: 17 mm; (6)vibration resistance: 50 m/s2 at f = 50 Hz.
Diagrams
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 DT210N18KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1800V 410A |
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DT210N12KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1200V 410A |
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DT210N14KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1400V 410A |
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DT210N16KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1600V 410A |
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DT210N18KOF |
Infineon Technologies |
Discrete Semiconductor Modules 1800V 410A |
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DT210N20/14KOF |
Infineon Technologies |
Discrete Semiconductor Modules 2000/1400V 410A |
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DT210N25/16KOF |
Infineon Technologies |
Discrete Semiconductor Modules 2500/1600V 410A |
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