(China (Mainland))
Product Summary
The FDA18N50 N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology of FDA18N50 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FDA18N50 is well suited for high efficient switched mode power supplies and active power factor correction.
Parametrics
FDA18N50 absolute maximum ratings: (1)Drain-Source Voltage: 500 V; (2)ID Drain Current: Continuous (TC = 25℃): 19 A, Continuous (TC = 100℃): 11.4 A; (3)Drain Current - Pulsed: 76 A; (4)Gate-Source voltage: ±30 V; (5)Single Pulsed Avalanche Energy: 945 mJ; (6)Avalanche Current: 19 A; (7)Repetitive Avalanche Energy: 23 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃): 239 W; (10)Operating and Storage Temperature Range -55 to +150 ℃; (11)Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds: 300 ℃.
Features
FDA18N50 features: (1)19A, 500V, RDS(on) = 0.265Ω@VGS = 10 V; (2)Low gate charge ( typical 45 nC); (3)Low Crss ( typical 25 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FDA18N50 |
Fairchild Semiconductor |
MOSFET 500V N-CH MOSFET |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FDA18N50 |
Fairchild Semiconductor |
MOSFET 500V N-CH MOSFET |
Data Sheet |
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FDA16N50_F109 |
Fairchild Semiconductor |
MOSFET 500V 16.5A NCH |
Data Sheet |
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FDA16N50 |
Fairchild Semiconductor |
MOSFET 500V 16.5A NCH MOSFET |
Data Sheet |
Negotiable |
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FDA15N65 |
Fairchild Semiconductor |
MOSFET 650V N-CH MOSFET |
Data Sheet |
Negotiable |
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