(China (Mainland))
Product Summary
The FDN335N is a kind of N-Channel 2.5V specified MOSFET, which is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Parametrics
FDN335N absolute maximum ratings:(1)Drain-Source Voltage:20V; (2)Gate-Source Voltage:±8V; (3)Drain Current - Continuous:1.7A;- Pulsed 8A; (4)Power Dissipation for Single Operation:0.46-0.5W; (5)Operating and Storage Junction Temperature Range:-55 to +150°C.
Features
FDN335N features:(1)1.7 A, 20 V. RDS(ON) = 0.07 Ω @ VGS = 4.5 V;RDS(ON) = 0.100 W @ VGS = 2.5 V; (2)Low gate charge (3.5nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FDN335N |
Fairchild Semiconductor |
MOSFET SSOT-3 N-CH 20V |
Data Sheet |
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FDN335N_NL |
Fairchild Semiconductor |
MOSFET N-CH 20V |
Data Sheet |
Negotiable |
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FDN335N_Q |
Fairchild Semiconductor |
MOSFET SSOT-3 N-CH 20V |
Data Sheet |
Negotiable |
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