(China (Mainland))
Product Summary
The IS61WV51232BLL is a high-speed, 16M-bit static RAM organized as 512K words by 32 bits. The IS61WV51232BLL is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The IS61WV51232BLL is packaged in the JEDEC standard 90-ball BGA (8mm×13mm).
Parametrics
IS61WV51232BLL absolute maximum ratings: (1)VTERM Terminal Voltage with Respect to GND:–0.5V to VDD + 0.5V; (2)VDD Relates to GND:–0.3V to 4.0 V; (3)TSTG Storage Temperature:–65℃ to +150℃; (4)PT Power Dissipation: 1.0W; (5) CIN Input Capacitance VIN = 0V: 6pF; (6) CI/O Input/Output Capacitance VOUT=0V: 8pF.
Features
IS61WV51232BLL features: (1)High-speed access times: 8, 10, 20 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single power supply VDD 1.65V to 2.2V (IS61WV51232Axx) speed = 20ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS61/64WV51232Bxx) speed = 10ns for VDD 2.4V to 3.6V speed = 8ns for VDD 3.3V±5%; (9)Packages available: 90-ball miniBGA (8mm×13mm); (10)Industrial and Automotive Temperature Support; (11)Lead-free available.
Diagrams
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 IS61WV51232BLL-10BLI |
ISSI |
SRAM 16M (512Kx32) 10ns Async SRAM 3.3v |
Data Sheet |
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IS61WV51232BLL-10BLI-TR |
ISSI |
SRAM 16M (512Kx32) 10ns Async SRAM 3.3v |
Data Sheet |
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