(China (Mainland))
Product Summary
The KTD1937-U/P is an epitaxial planar NPN transistor.
Parametrics
KTD1937-U/P absolute maximum ratings: (1)Collector-Base Voltage VCBO: 100V; (2)Collector-Emitter Voltage VCEO: 80V; (3)Emitter-Base Voltage VEB0: 7V; (4)Collector Current DC: 10A, Pulse 15A; (5)Base Current: 2A; (6)Collector Power Dissipation at Ta=25℃: 2W, at Tc=25℃: 40W; (7)Junction Temperature Tj: 150℃; (8)Storage Temperature Range: -55℃ to 150℃.
Features
KTD1937-U/P features: (1) High hFE: 500 to 1500(IC=1A); (2) Low Saturation: VCE (sat) =0.35V (Max.) (IC=5A).
Diagrams
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 KTD101B105M32A0T00 |
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CAP CER 1UF 100V 20% RADIAL |
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KTD101B155M32A0T00 |
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CAP CER 1.5UF 100V 20% RADIAL |
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KTD101B225M32A0T00 |
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CAP CER 2.2UF 100V 20% RADIAL |
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KTD101B334M32A0T00 |
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CAP CER 0.33UF 100V 20% RADIAL |
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KTD101B335M43A0T00 |
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CAP CER 3.3UF 100V 20% RADIAL |
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KTD101B474M32A0T00 |
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CAP CER 0.47UF 100V 20% RADIAL |
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