Product Summary

The KTD1937-U/P is an epitaxial planar NPN transistor.

Parametrics

KTD1937-U/P absolute maximum ratings: (1)Collector-Base Voltage VCBO: 100V; (2)Collector-Emitter Voltage VCEO: 80V; (3)Emitter-Base Voltage VEB0: 7V; (4)Collector Current DC: 10A, Pulse 15A; (5)Base Current: 2A; (6)Collector Power Dissipation at Ta=25℃: 2W, at Tc=25℃: 40W; (7)Junction Temperature Tj: 150℃; (8)Storage Temperature Range: -55℃ to 150℃.

Features

KTD1937-U/P features: (1) High hFE: 500 to 1500(IC=1A); (2) Low Saturation: VCE (sat) =0.35V (Max.) (IC=5A).

Diagrams

KTD1937-U/P dimension

KTD101B105M32A0T00
KTD101B105M32A0T00


CAP CER 1UF 100V 20% RADIAL

Data Sheet

0-2000: $0.53
KTD101B155M32A0T00
KTD101B155M32A0T00


CAP CER 1.5UF 100V 20% RADIAL

Data Sheet

0-2000: $0.53
KTD101B225M32A0T00
KTD101B225M32A0T00


CAP CER 2.2UF 100V 20% RADIAL

Data Sheet

0-2000: $0.54
KTD101B334M32A0T00
KTD101B334M32A0T00


CAP CER 0.33UF 100V 20% RADIAL

Data Sheet

0-2000: $0.52
KTD101B335M43A0T00
KTD101B335M43A0T00


CAP CER 3.3UF 100V 20% RADIAL

Data Sheet

0-2000: $0.60
KTD101B474M32A0T00
KTD101B474M32A0T00


CAP CER 0.47UF 100V 20% RADIAL

Data Sheet

0-2000: $0.52