(China (Mainland))
Product Summary
The L6387D is an high-voltage device, manufactured with the BCD OFF-LINE technology. L6387D has a Driver structure that enables to drive independent referenced N Channel Power MOS or IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
Parametrics
L6387D absolute maximum ratings: (1)Vout Output Voltage: -3 to Vboot - 18 V; (2)Vcc Supply Voltage: - 0.3 to +18 V; (3)Vboot Floating Supply Voltage: - 1 to 618 V; (4)Vhvg Upper Gate Output Voltage: - 1 to Vboot V; (5)Vlvg Lower Gate Output Voltage: -0.3 to Vcc +0.3 V; (6)Vi Logic Input Voltage: -0.3 to Vcc +0.3 V; (7)dVout/dt Allowed Output Slew Rate: 50 V/ns; (8)Ptot Total Power Dissipation (Tj = 85 ℃): 750 mW; (9)Tj Junction Temperature: 150 ℃; (10)Ts Storage Temperature: -50 to 150 ℃.
Features
L6387D features: (1)HIGH VOLTAGE RAIL UP TO 600 V; (2)dV/dt IMMUNITY +- 50 V/nsec IN FULL TEMPERATURE RANGE; (3)DRIVER CURRENT CAPABILITY: 400 mA SOURCE, 650 mA SINK; (4)SWITCHING TIMES 50/30 nsec RISE/FALL WITH 1nF LOAD; (5)CMOS/TTL SCHMITT TRIGGER INPUTS WITH HYSTERESIS AND PULL DOWN; (6)INTERNAL BOOTSTRAP DIODE; (7)OUTPUTS IN PHASE WITH INPUTS.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 L6387D |
STMicroelectronics |
Power Driver ICs Hi-Volt Hi-Low Side |
Data Sheet |
Negotiable |
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L6387DTR |
STMicroelectronics |
Power Driver ICs Hi-Volt Hi-Low Side |
Data Sheet |
Negotiable |
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