(China (Mainland))
Product Summary
The MG150J2YS50 is a TOSHIBA GTR Module, which is Silicon N Channel IGBT.
Parametrics
MG150J2YS50 absolute maximum ratings: (1)Collector-emitter voltage: 600 V; (2)Gate-emitter voltage: ±20 V; (3)Collector current: DC: 150 A, 1ms: 300 A; (4)Forward current: DC: 150 A, 1ms: 300 A; (5)Collector power dissipation (Tc = 25℃): 780 W; (6)Junction temperature: 150 ℃; (7)Storage temperature range: -40 ~ 125 ℃; (8)Isolation voltage VIsol: 2500 (AC 1 min.) V; (9)Screw torque (Terminal / mounting): 3 / 3 N·m.
Features
MG150J2YS50 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Includes a complete half bridge in one package; (4)Enhancement-mode; (5)High speed : tf = 0.30μs (Max) (IC = 150A), trr = 0.15μs (Max) (IF = 150A); (6)Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 150A).
Diagrams
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 MG150J1JS50 |
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MG150J7KS61 |
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MG150Q1JS44 |
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Negotiable |
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