(China (Mainland))
Product Summary
The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon advanced LDMOS process, the PTFA211801E provides excellent thermal performance and superior reliability.
Parametrics
PTFA211801E absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 65 V; (2)Gate-Source Voltage, VGS: –0.5 to +12 V; (3)Junction Temperature, TJ: 200 °C; (4)Storage Temperature Range, TSTG: –40 to +150 °C; (5)Thermal Resistance (TCASE = 70°C, 150 W CW) RθJC: 0.31 °C/W.
Features
PTFA211801E features: (1)Broadband internal matching; (2)Typical two-carrier WCDMA performance at 2140; (3)MHz, 28 V: Average output power = 45.5 dBm; Linear Gain = 15.5 dB; Efficiency = 27.5%; Intermodulation distortion = -36 dBc; Adjacent channel power = -41 dBc; (4)Typical CW performance, 2170 MHz, 30 V: Output power at P1dB = 180 W; Efficiency = 52%; (5)Integrated ESD protection; (6)Excellent thermal stability, low HCI drift; (7)Capable of handling 10:1 VSWR @ 28 V, 150 W (CW) output power; (8)Pb-free and RoHS-compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 PTFA211801E V4 |
Infineon Technologies |
Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8 |
Data Sheet |
Negotiable |
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PTFA211801E V4 R250 |
Infineon Technologies |
Transistors RF MOSFET Power Hi Pwr RF LDMOS FET 180 W 2110-2170 MHz |
Data Sheet |
Negotiable |
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 |
PTFA211801E V5 R250 |
|
FET RF LDMOS 180W H36260-2 |
Data Sheet |
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PTFA211801E V5 |
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FET RF LDMOS 180W H36260-2 |
Data Sheet |
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