(China (Mainland))
Product Summary
The SKM100GB123D is an IGBT module.
Parametrics
SKM100GB123D absolute maximum ratings: (1)VCES: 1200 V; (2)IC @ Tcase=25℃: 100 A; (3)VCEsat @ Ic=25℃: 3.8 V; (4)Ptot @ Tcase=25℃: 400 W; (5)Rthjo IGBT: 0.30 ℃/W; (6)RthCH module: 0.05 ℃/W; (7)case: D61.
Features
SKM100GB123D features: (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependance;(5)high short circuit capability, self limiting to 6 x Icnom;(6)latch-up free;(7)fast and soft inverse CAL diodes;(8)isolated copper baseplate using DBC direct copper bonding technology;(9)large clearance (12 mm) and creepage distances (20 mm).
Diagrams
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 SKM100GAL123D |
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SKM100GB124D |
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Negotiable |
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SKM100GB125DN |
Other |
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Negotiable |
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SKM100GB173D |
Other |
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Negotiable |
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SKM111AR |
Other |
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Negotiable |
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SKM121AR |
Other |
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Data Sheet |
Negotiable |
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