Product Summary

The SKM100GB124D is designed as one kind of Trench IGBT module.

Parametrics

SKM100GB124D absolute maximum ratings: (1)VCES: 1200 V; (2)IC: 150 (100) A at Tc=25(85) ℃; (3)ICRM: 150 A at tp=1ms; (4)VGES: ±20 V; (5)Tvj, (Tstg): -40 to +150 ℃ at Toperstion ≤ Tstg; (6)Visol: 2500 V at AC, 1min.

Features

SKM100GB124D features: (1)MOS input (voltage controlled);(2)N-channel, homogeneous Si;(3)low inductance case;(4)very low tail current with low temperature dependance;(5)high short circuit capability, self limiting to 6 x Icnom;(6)latch-up free;(7)fast and soft inverse CAL diodes;(8)isolated copper baseplate using DBC direct copper bonding technology;(9)large clearance (12 mm) and creepage distances (20 mm).

Diagrams

SKM100GB124D block diagram

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