Product Summary

The SKM195GB063DN is a SEMITRANS M Superfast NPT-IGBT Module. The applications of the SKM195GB063DN include Switching (not for linear use), Switched mode power supplies, AC inverter drives, UPS uninterruptable power supplies.

Parametrics

SKM195GB063DN absolute maximum ratings: (1)VCES: 600 V; (2)VCGR: 600 V at RGE = 20 kΩ; (3)IC: 250/190 A at Tcase = 25/80 ℃; (4)ICM: 500/380 A at Tcase = 25/80 ℃; tp = 1 ms; (5)VGES: ± 20 V; (6)Ptot: 960 W at per IGBT, Tcase = 25 ℃; (7)Tj, (Tstg): –40 to +150 (125) ℃; (8)Visol: 2500 V at AC, 1 min; (9)humidity: class 3K7/IE32; (10)climate: 40/125/56.

Features

SKM195GB063DN features: (1)N channel, homogeneous Silicon structure (NPT-Non-Punchthrough IGBT); (2)Low tail current with low temperature dependence; (3)High short circuit capability, self limiting; (4)Pos. temp. coeff. of VCEsat; (5)Low inductance case; (6)Fast & soft inverse CAL diodes; (7)Without hard mould; (8)Large clearance (10 mm) and creepage distances (20 mm).

Diagrams

SKM195GB063DN diagram

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