Product Summary

The STB4NB80 is a N-channel MOSFET. It uses the latest high voltage MESH OVERLAY process. With outstanding performances, the STB4NB80 is coupled with the Company proprietary edge termination structure. It gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. The applications of the STB4NB80 include high current, high speed switching, switch mode power supplies (smps), DC-AC converters for welding equipment and uninterruptible and power supplies and motor drive.

Parametrics

STB4NB80 absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS = 0): 800 V; (2)VDGR, Drain- gate Voltage (RGS = 20 kW): 800 V; (3)VGS, Gate-source Voltage: ±30 V; (4)ID, Drain Current (continuous) at Tc = 25℃: 4A; (5)ID, Drain Current (continuous) at Tc = 100℃: 2.4A; (6)IDM(·), Drain Current (pulsed): 16A; (7)Ptot, Total Dissipation at Tc = 25℃: 100W; (8)Derating Factor: 1W/℃; (9)dv/dt, Peak Diode Recovery voltage slope: 4.5V/ns; (10)Tstg, Storage Temperature: -65 to 150℃; (11)Tj, Max. Operating Junction Temperature: 150℃.

Features

STB4NB80 features: (1)typical RDS(on) = 3W; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)very low intrinsic capacitances; (5)gate charge minimized.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
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STB4NB80
STB4NB80

STMicroelectronics

MOSFET N-Ch 800 Volt 4 Amp

Data Sheet

Negotiable 
STB4NB80FP
STB4NB80FP

Other


Data Sheet

Negotiable 
STB4NB80T4
STB4NB80T4

STMicroelectronics

MOSFET N-Ch 800 Volt 4 Amp

Data Sheet

Negotiable