(China (Mainland))
Product Summary
The 2SJ526 is a Silicon P Channel MOS FET High Speed Power Switching.
Parametrics
2SJ526 absolute maximum ratings: (1)Drain to source voltage VDSS: –60 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: –12 A; (4)Drain peak current ID(pulse): –48 A; (5)Body-drain diode reverse drain current: IDR –12 A; (6)Avalenche current IAP: –12 A; (7)Avalenche energy EAR: 12 mJ; (8)Channel dissipation Pch: 25 W; (9)Channel temperature Tch: 150℃; (10)Storage temperature Tstg: –55 to +150℃.
Features
2SJ526 features: (1)Low on-resistance RDS(on) = 0.11 Ω typ.; (2)Low drive current; (3)4 V gete drive devices; (4)High speed switching.
Diagrams
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 2SJ526 |
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Data Sheet |
Negotiable |
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2SJ501 |
Other |
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Negotiable |
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2SJ502 |
Other |
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Negotiable |
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2SJ503 |
Other |
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Data Sheet |
Negotiable |
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2SJ504 |
Other |
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Negotiable |
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2SJ505 |
Other |
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Data Sheet |
Negotiable |
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2SJ505(L) |
Other |
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Data Sheet |
Negotiable |
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