(China (Mainland))
Product Summary
The BCW32 is a NPN general purpose transistor in a plastic SOT23 package. PNP complements: BCW29 and BCW30.
Parametrics
BCW32 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 32 V; (2)VCEO collector-emitter voltage open base; IC = 2 mA: 32 V; (3)VEBO emitter-base voltage open collector: 5 V; (4)IC collector current (DC): 100 mA; (5)ICM peak collector current: 200 mA; (6)IBM peak base current: 200 mA; (7)Ptot total power dissipation Tamb ≤ 25 ℃: 250 mW; (8)Tstg storage temperature: -65 to +150℃; (9)Tj junction temperature: 150℃; (10)Tamb operating ambient temperature: -65 to +150℃.
Features
BCW32 features: (1)Low current (100 mA); (2)Low voltage (32 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BCW32 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GP AMP |
Data Sheet |
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BCW32 /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-11 |
Data Sheet |
Negotiable |
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BCW32 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
Negotiable |
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BCW32,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
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BCW32,235 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-11 |
Data Sheet |
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 |
BCW32_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GP AMP |
Data Sheet |
Negotiable |
|
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 |
BCW32LT1 |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 32V NPN |
Data Sheet |
Negotiable |
|
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BCW32LT1G |
ON Semiconductor |
Transistors Bipolar (BJT) 100mA 32V NPN |
Data Sheet |
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