Product Summary
The BTS5231-2GS is a dual channel high-side power switch in PG-DSO-14-31 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is monolithically integrated in Smart SIPMOS technology. It is suitable for compatible high-side power switch with diagnostic feedback for 12 V grounded loads; all types of resistive, inductive and capacitive loads; loads with high inrush currents, so as lamps; and loads with low currents, so as LEDs. It can also replace electromechanical relays, fuses and discrete circuits.
Parametrics
Maximum ratings: (1)Supply voltage, Vbb: -16 to 28 V; (2)Supply voltage for full short circuit protection (single pulse)(Tj = -40 °C to 150 °C, Vbb(SC): 0 to 20 V at L = 8 μH, R = 0.2 Ω; (3)Voltage at power transistor, VDS: 52 V max; (4)Supply Voltage for Load Dump protection, Vbb(LD): 40 V max at RI = 2 Ω, RL = 12 Ω; (5)Load current, IL: IL(LIM) A; (6)Maximum energy dissipation single pulse, EAS: 45 mJ at IL(0) = 2.1 A, Tj(0) = 150 °C, Vbb=13.5V; (7)Power dissipation (DC), Ptot: 0.9 W at Ta = 85 °C, Tj ≤ 150 °C; (8)Voltage at input pin, VIN: -5v min, -16 v min at t ≤ 2 min, 10 V max; (9)Current through input pin, IIN: -2.0mA min, -8.0 mA min t ≤ 2 min, 2.0 mA max; (10)Voltage at sense enable pin, VSEN: -5 v min, -16 v min t ≤ 2 min, 10 V max; (11)Current through sense enable pin, ISEN: -2.0 mA min, -8.0mAt ≤ 2 min, 2.0 mA MAX; (12)Current through sense pin, IIS: -25 to 10 mA; (13)Junction Temperature, Tj: -40 150 °C; (14)Dynamic temperature increase while switching, ΔTj: 60 °C; (15)Storage Temperature, Tstg: -55 150 °C; (16)ESD susceptibility HBM according to EIA/JESD 22-A 114B, VESD: IN, SEN: -1 to 1kv; IS: -2 to 2kv; OUT: -4 to 4 kv.
Features
Features: (1)Very low standby current; (2)3.3 V and 5 V compatible logic pins; (3)Improved electromagnetic compatibility (EMC); (4)Stable behaviour at undervoltage; (5)Logic ground independent from load ground; (6)Secure load turn-off while logic ground disconnected.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BTS5231-2GS |
Infineon Technologies |
Power Switch ICs - Power Distribution IC POWER SWITCH HIGH SIDE 1.3/1.8A |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BTS50050-1EGA |
Infineon Technologies |
Power Switch ICs - POE / LAN HIC-PROFET |
Data Sheet |
|
|
|||||||||||||
BTS50055-1TMA |
Infineon Technologies |
Power Switch ICs - Power Distribution Smart Hi-side Hi Currnt PWR Switch |
Data Sheet |
|
|
|||||||||||||
BTS50055-1TMB |
Infineon Technologies |
Power Switch ICs - Power Distribution SMART HI SIDE HI CURRENT PWR SWITCH |
Data Sheet |
|
|
|||||||||||||
BTS50055-1TMC |
Infineon Technologies |
Power Switch ICs - Power Distribution SMART HI SIDE HI CURRENT PWR SWITCH |
Data Sheet |
|
|
|||||||||||||
BTS50060-1EGA |
Infineon Technologies |
Power Switch ICs - POE / LAN HIC-PROFET |
Data Sheet |
|
|
|||||||||||||
BTS50060-1TEA |
Infineon Technologies |
Power Switch ICs - POE / LAN Smart Hi-Side Pwr SW 1 Channel |
Data Sheet |
|
|