(China (Mainland))
Product Summary
The CMOS BQ4013YMA-85 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. The control circuitry constantly monitors the single 5V supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The BQ4013YMA-85 uses an extremely low standby current CMOS SRAM, coupled with a small lithium coin cell to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM. The BQ4013YMA-85 requires no external circuitry and is socket-compatible with industry-standard SRAMs and most EPROMs and EEPROMs.
Parametrics
BQ4013YMA-85 absolute maximum ratings:(1)VCC DC voltage applied on VCC relative to VSS: -0.3 to 7.0 V; (2)VT DC voltage applied on any pin excluding VCC relative to VSS: -0.3 to 7.0 V at VT ≤ VCC + 0.3; (3)TOPR Operating temperature: 0 to +70 ℃ Commercial; -40 to +85 ℃ at Industrial N; (4)TSTG Storage temperature: -40 to +70 ℃ Commercial; -40 to +85 ℃ at Industrial “N”; (5)TBIAS Temperature under bias: -10 to +70 ℃ Commercial; -40 to +85 ℃ Industrial “N”; (6)TSOLDER Soldering temperature: +260 ℃ For 10 seconds.
Features
BQ4013YMA-85 features: (1)Data retention for at least 10 years without power; (2)Automatic write-protection during power-up/power-down cycles; (3)Conventional SRAM operation, including unlimited write cycles; (4)Internal isolation of battery before power application; (5)Industry standard 32-pin DIP pinout.
Diagrams
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 BQ4013YMA-85 |
Texas Instruments |
NVRAM 128Kx8 Nonvolatile SRAM |
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BQ4013YMA-85N |
Texas Instruments |
NVRAM 128Kx8 Nonvolatile |
Data Sheet |
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