BTS410E2

Smart Highside Power Switch, TO-220, 4.7 to 42V Operating voltage, 220 mΩ

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PartNumber:: BTS410E2

Brand:: eupec GmbH - infineon | Pack: TO | D/C: 09+

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Products Upload time: 2011-06-30

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Product Summary

The BTS410E2 is a N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. The applications of BTS410E2 are: μC compatible power switch with diagnostic feedback for 12V and 24 V DC grounded loads; All types of resistive, inductive and capacitve loads; Replaces electromechanical relays, fuses and discrete circuits.

Parametrics

BTS410E2 absolute maximum ratings: (1)Supply voltage (overvoltage protection see page 3), Vbb: 65 V; (2)Load dump protection VLoadDump = UA + Vs, UA = 13.5 V, RI= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high: VLoad dump: 100 V; (3)Load current (Short circuit current, see page 4), IL: self-limited A; (4)Operating temperature range, Tj: -40 to +150℃; (5)Storage temperature range, Tstg: -55 to +150℃; (6)Power dissipation (DC), TC ≤ 25 ℃, Ptot: 50 W; (7)Inductive load switch-off energy dissipation, single pulse, Vbb =12V, Tj,start =150℃, TC =150℃ const: EAS 4.5 J; (8)Electrostatic discharge capability (ESD) IN: VESD 1kV; (9)Input voltage (DC) VIN: -0.5 to +6 V; (10)Current through input pin (DC): IIN ±5.0 mA; (11)Current through status pin (DC) IST: ±5.0 mA.

Features

BTS410E2 features: (1)Overload protection; (2)Current limitation; (3)Short circuit protection; (4)Thermal shutdown; (5)Overvoltage protection (including load dump); (6)Fast demagnetization of inductive loads; (7)Reverse battery protection1); (8)Undervoltage and overvoltage shutdown with auto-restart and hysteresis; (9)Open drain diagnostic output; (10)Open load detection in ON-state; (11)CMOS compatible input; (12)Loss of ground and loss of Vbb protection; (13)Electrostatic discharge (ESD) protection.