Product Summary
The BTS721L1 is a N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. The BTS721L1 provides embedded protective functions.
Parametrics
BTS721L1 absolute maximum ratings: (1)Supply voltage (overvoltage protection see page 4) Vbb: 43 V; (2)Supply voltage for full short circuit protection, Tj,start =-40 to +150℃, Vbb: 34 V; (3)Load current (Short-circuit current, see page 5) IL: self-limited A; (4)Load dump protection, VLoad: 60 V; (5)Operating temperature range, Tj: -40 to +150℃; (6)Storage temperature range, Tstg: -55 ...+150℃; (7)Power dissipation (DC)5 Ta = 25℃: Ptot 3.7W; (all channels active) Ta = 85℃: 1.9W; (8)Electrostatic discharge capability (ESD)(Human Body Model), VESD: 1.0 kV; (9)Input voltage (DC) VIN: -10 to +16 V; (10)Current through input pin (DC) IIN: ±2.0 mA; (11)Current through status pin (DC) IST: ±5.0 mA; (12)Thermal resistance, junction - soldering point each channel: Rthjs 15 K/W; junction - ambient one channel active: Rthja 41 K/W; all channels active: 34K/W.
Features
BTS721L1 features: (1)Overload protection; (2)Current limitation; (3)Short-circuit protection; (4)Thermal shutdown; (5)Overvoltage protection (including load dump); (6)Fast demagnetization of inductive loads; (7)Reverse battery protection1); (8)Undervoltage and overvoltage shutdown with auto-restart and hysteresis; (9)Open drain diagnostic output; (10)Open load detection in ON-state; (11)CMOS compatible input; (12)Loss of ground and loss of Vbb protection; (13)Electrostatic discharge (ESD) protection.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BTS721L1 |
Infineon Technologies |
Power Switch ICs - POE / LAN SMART 4-CH HI-SIDE PWR SWITCH |
Data Sheet |
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BTS721L1T |
IC SWITCH HI-SIDE 4-CH DSO-20 |
Data Sheet |
Negotiable |
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