(China (Mainland))
Product Summary
The CY62167EV18LL-55BVXI is a high performance CMOS static RAM organized as 1M words by 16 bits. The CY62167EV18LL-55BVXI features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL in portable applications such as cellular telephones. The CY62167EV18LL-55BVXI also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling.
Parametrics
CY62167EV18LL-55BVXI absolute maximum ratings: (1)Storage Temperature:–65℃ to + 150℃; (2)Ambient Temperature with Power Applied:–55℃ to + 125℃; (3)Supply Voltage to Ground Potential:–0.2V to 2.45V (VCC(max) + 0.2V); (4)DC Voltage Applied to Outputs in High Z State[6, 7]: –0.2V to 2.45V (VCC(max) + 0.2V); (5)DC Input Voltage[6, 7]: –0.2V to 2.45V (VCC(max) + 0.2V); (6)Output Current into Outputs (LOW): 20mA; (7)Static Discharge Voltage: ＞2001V (MIL-STD-883, Method 3015); (8)Latch up Current: ＞200 mA.
Features
CY62167EV18LL-55BVXI features: (1)Very high speed: 55ns; (2)Wide voltage range: 1.65V to 2.25V; (3)Ultra low standby power; (4)Typical standby current: 1.5μA; (5)Maximum standby current: 12μA; (6)Ultra low active power; (7)Typical active current: 2.2mA at f = 1 MHz; (8)Easy memory expansion with CE1, CE2, and OE features; (9)Automatic power down when deselected; (10)CMOS for optimum speed and power; (11)Offered in Pb-free 48-ball VFBGA packages.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 CY62167EV18LL-55BVXI |
Cypress Semiconductor |
SRAM SLo 1.8V SUPER LoPwr 1MEGX16 PbFree SRAM |
Data Sheet |
|
|
||||||||||
|
CY62167EV18LL-55BVXIT |
Cypress Semiconductor |
SRAM SLo 1.8V SUPER LoPwr 1MEGX16 PbFree SRAM |
Data Sheet |
|
|
||||||||||
