DA28F016SV-70

Product Summary

The DA28F016SV-70 is a kind of 16-Mbit FlashFile memory. It is a revolutionary architecture which is the ideal choice for designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative capabilities, low-power operation, user-selectable VPP voltage and high read/program performance, the DA28F016SV-70 enables the design of truly mobile, high-performance personal computing and communications products. The DA28F016SV-70 is the highest density, highest performance nonvolatile read/program solution for solid-state storage applications. Its symmetrically-blocked architecture (100% compatible with the DA28F016SV-70 8-Mbit and 28F016SA 16-Mbit FlashFile memories), extended cycling, flexible VCC and VPP voltage (SmartVoltage technology), fast program and read performance and selective block locking, provide a highly-flexible memory component suitable for Resident Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives.

Parametrics

DA28F016SV-70 absolute maximum ratings: (1)Temperature Under Bias: 0°C to +80°C; (2)Storage Temperature: –65°C to +125°C; (3)TA, Operating Temperature, Commercial: 0 to 70℃; (4)VCC, VCC with Respect to GND: –0.2 to 7.0 V; (5)VPP, VPP Supply Voltage with Respect to GND: –0.2 to 14.0 V; (6)V, Voltage on Any Pin (except VCC,VPP) with Respect to GND: –0.5 to VCC + 0.5V; (7)I, Current into Any Non-Supply Pin: ± 30 mA; (8)IOUT, Output Short Circuit Current: 100 mA.

Features

DA28F016SV-70 features: (1)SmartVoltage Technology: User-Selectable 3.3V or 5V VCC; User-Selectable 5V or 12V VPP; (2)65 ns Access Time; (3)1 MillioErase Cycles per Block; (4)30.8 MB/sec Burst Write Transfer Rate; (5)0.48 MB/sec Sustainable Write Transfer Rate; (6)Configurable x8 or x16 Operation; (7)56-Lead TSOP and SSOP Type I Packages; (8)Backwards-Compatible with 28F016SA, 28F008SA Command Set; (9)Revolutionary Architecture: Multiple Command Execution; Program during Erase; Command Super-Set of the Intel 28F008SA; Page Buffer Program; (10)2 μA Typical Deep Power-Down; (11)32 Independently Lockable Blocks; (12)State-of-the-Art 0.6 μm ETOX IV Flash Technology.

Diagrams