(China (Mainland))
Product Summary
The FGA90N33 is a 330V, 90A PDP Trench IGBT. It uses Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offering the optimum performance for PDP applications where low conduction and switching losses are essential. The application of the FGA90N33 includes PDP System.
Parametrics
FGA90N33 absolute maximum ratings: (1)VCES Collector to Emitter Voltage: 330V; (2)VGES Gate to Emitter Voltage: ±30V; (3)IC Collector Current @ TC = 25℃: 90A; (4)IC pulse(1) Pulsed Collector Current @ TC = 25℃: 220A; (5)IC pulse(2) Pulsed Collector Current @ TC = 25℃: 330A; (6)PD Maximum Power Dissipation @ TC = 25℃: 223W; (7)Maximum Power Dissipation @ TC = 100℃: 89W; (8)TJ Operating Junction Temperature: -55℃ to +150℃; (9)Tstg Storage Temperature Range: -55℃ to +150℃; (10)TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds: 300℃.
Features
FGA90N33 features: (1) High current capability; (2) Low saturation voltage: VCE (sat) =1.1V @ IC = 20A; (3) High input impedance; (4) Fast switching; (5) RoHS compliant.
Diagrams
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 FGA90N33AT |
Other |
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Data Sheet |
Negotiable |
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FGA90N33ATD |
Other |
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Data Sheet |
Negotiable |
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FGA90N33ATDTU |
Fairchild Semiconductor |
IGBT Transistors 330V 90A PDP Trench |
Data Sheet |
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FGA90N33ATTU |
Fairchild Semiconductor |
IGBT Transistors 330V 90A PDP Trench |
Data Sheet |
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