(China (Mainland))
Product Summary
The HAT2167H-EL-E is a silicon N channel power MOS FET power switching.
Parametrics
HAT2167H-EL-E absolute maximum ratings: (1)Drain to source voltage VDSS 30 V; (2)Gate to source voltage VGSS ±20 V; (3)Drain current ID 40 A; (4)Drain peak current ID(pulse); (5)Note1 160 A; (6)Body-drain diode reverse drain current IDR 40 A; (7)Avalanche current IAP; (8)Note 2 20 A; (9)Avalanche energy EAR; (10)Note 2 40 mJ; (11)Channel dissipation Pch Note3 20 W; (12)Channel to Case Thermal Resistance θch-C 6.25 ℃/W; (13)Channel temperature Tch 150 ℃; (14)Storage temperature Tstg –55 to +150 ℃.
Features
HAT2167H-EL-E features: (1)High speed switching; (2)Capable of 4.5 V gate drive; (3)Low drive current; (4)High density mounting; (5)Low on-resistance. RDS(on) = 4.2 mtyp. (at VGS = 10 V).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 HAT2167H-EL-E |
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MOSFET N-CH 30V 40A LFPAK |
Data Sheet |
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