(China (Mainland))
Product Summary
The IRFB18N50K is a SMPS MOSFET. The applications of the IRFB18N50K include Switch Mode Power Supply (SMPS), Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.
Parametrics
IRFB18N50K absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 17 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 11 A; (3)IDM, Pulsed Drain Current: 68 A; (4)PD @TC = 25℃, Power Dissipation: 220 W; (5)Linear Derating Factor: 1.8 W/℃; (6)VGS, Gate-to-Source Voltage: ± 30 V; (7)dv/dt, Peak Diode Recovery dv/dt: 11 V/ns; (8)Operating Junction and Storage Temperature Range: -55 to + 150 ℃; (9)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ).
Features
IRFB18N50K features: (1)Low Gate Charge Qg results in Simple Drive Requirement; (2)Improved Gate, Avalanche and Dynamicdv/dt Ruggedness; (3)Fully Characterized Capacitance and Avalanche Voltage and Current; (4)Low RDS(on).
Diagrams
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 IRFB18N50K |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
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IRFB18N50KPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 17 Amp |
Data Sheet |
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