Product Summary
The IRFP240 Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package of IRFP240 is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. The IRFP240 also provides greater creepage distances between pins to meet the requirements of most safety specifications.
Parametrics
IRFP240 absolute maximum ratings: (1)Drain-Source Voltage: 200 V; (2)Gate-Source Voltage: ± 20 V; (3)Continuous Drain Current: 20 A at TC = 25 ℃, 12 A at TC = 100 ℃; (4)Pulsed Drain Currenta: 80 A; (5)Linear Derating Factor: 1.2 W/℃; (6)Single Pulse Avalanche Energy: 510 mJ; (7)Repetitive Avalanche Current: 20 A; (8)Repetitive Avalanche Energy: 15 mJ; (9)Maximum Power Dissipation TC = 25 ℃: 150 W; (10)Peak Diode Recovery dV/dt: 5.0 V/ns; (11)Operating Junction and Storage Temperature Range: - 55 to + 150 ℃.
Features
IRFP240 features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Isolated Central Mounting Hole; (4)Fast Switching; (5)Ease of Paralleling; (6)Simple Drive Requirements; (7)Lead (Pb)-free Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFP240 |
Vishay/Siliconix |
MOSFET N-Chan 200V 20 Amp |
Data Sheet |
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IRFP240, SiHFP240 |
Other |
Data Sheet |
Negotiable |
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IRFP240B_FP001 |
Fairchild Semiconductor |
MOSFET 200V Single |
Data Sheet |
Negotiable |
|
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IRFP240B_FP001_Q |
Fairchild Semiconductor |
MOSFET 200V Single |
Data Sheet |
Negotiable |
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IRFP240_R4941 |
Fairchild Semiconductor |
MOSFET TO-247 |
Data Sheet |
Negotiable |
|
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IRFP240A |
Other |
Data Sheet |
Negotiable |
|
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IRFP240PBF |
Vishay/Siliconix |
MOSFET N-Chan 200V 20 Amp |
Data Sheet |
|
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IRFP240N_R4942 |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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