K4J52324QC-BC14

Product Summary

The K4J52324QC-BC14 is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 6.4GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, and programmable latencies allow the K4J52324QC-BC14 to be useful for a variety of high performance memory system applications.

Parametrics

K4J52324QC-BC14 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -0.5 ~ VDDQ + 0.5V; (2)Voltage on VDD supply relative to Vss VDD: -0.5 ~ 2.5 V; (3)Voltage on VDDQ supply relative to Vss VDDQ: -0.5 ~ 2.5 V; (4)MAX Junction Temperature TJ: +125 ℃; (5)Storage temperature TSTG: -55 ~ +150 ℃; (6)Power dissipation PD: TBD W; (7)Short Circuit Output Current IOS: 50 mA.

Features

K4J52324QC-BC14 features: (1)2.0V + 0.1V power supply for device operation for -BJ; (2)2.0V + 0.1V power supply for I/O interface for -BJ; (3)1.8V + 0.1V power supply for device operation for -BC; (4)1.8V + 0.1V power supply for I/O interface for -BC; (5)On-Die Termination (ODT); (6)Output Driver Strength adjustment by EMRS; (7)Calibrated output drive; (8)1.8V Pseudo Open drain compatible inputs/outputs; (9)4 internal banks for concurrent operation; (10)Differential clock inputs (CK and CK); (11)Commands entered on each positive CK edge; (12)CAS latency : 4, 5, 6, 7, 8, 9, 10, 11 (clock); (13)Additive latency (AL): 0 and 1 (clock); (14)Programmable Burst length : 4 and 8; (15)Programmable Write latency : 1, 2, 3, 4, 5, 6 and 7 (clock); (16)Single ended READ strobe (RDQS) per byte; (17)Single ended WRITE strobe (WDQS) per byte; (18)RDQS edge-aligned with data for READs; (19)WDQS center-aligned with data for WRITEs; (20)Data Mask(DM) for masking WRITE data; (21)Auto & Self refresh modes; (22)Auto Precharge option; (23)32ms, auto refresh (8K cycle); (24)136 Ball FBGA; (25)Maximum clock frequency up to 800MHz; (26)Maximum data rate up to 1.6Gbps/pin; (27)DLL for outputs; (28)Boundary scan function with SEN pin; (29)Mirror function with MF pin.

Diagrams