Product Summary

The M41T56M6F is a low power, Serial Real Time Clock with 56 bytes of NVRAM. A built-in 32,768Hz oscillator (external crystal controlled) and the first 8 bytes of the RAM are used for the clock/calendar function and are configured in binary coded decimal (BCD) format. Addresses and data are transferred serially via a two-line, bi-directional bus. The built-in address register is incremented automatically after each WRITE or READ data byte. The M41T56M6F clock has a built-in power sense circuit which detects power failures and automatically switches to the battery supply during power failures. The energy needed to sustain the RAM and clock operations can be supplied from a small lithium coin cell. Typical data retention time is in excess of 10 years with a 50mAh, 3V lithium cell. The M41T56M6F is supplied in an 8-lead Plastic SOIC package or a 28-lead SNAPHAT package.

Parametrics

M41T56M6F absolute maximum ratings: (1)TA Ambient operating temperature: –40 to 85 ℃; (2)TSTG Storage temperature(VCC off, oscillator off): SNAPHAT: –40 to 85℃; SOIC: –55 to 125℃; (3)TSLD Lead solder temperature for 10 seconds: 260 ℃; (4)VIO Input or output voltages: –0.3 to 7 V; (5)VCC Supply voltage: –0.3 to 7 V; (6)IO Output current: 20 mA; (7)PD Power dissipation: 0.25 W.

Features

M41T56M6F features: (1)Counters for seconds, minutes, hours, day,; (2)date, month, years, and century; (3)32 KHz crystal oscillator integrating load capacitance(12.5pF) providing exceptional oscillator stability and high crystal series resistance operation; (4)Serial interface supports I2C Bus (400kHz protocol); (5)Ultra-low battery supply current of 450nA (typ@3V); (6)5V ±10% supply voltage; (7)Timekeeping down to 2.5V; (8)Automatic power-fail detect and switch circuitry; (9)56 bytes of general purpose RAM; (10)Software clock calibration to compensate crystal deviation due to temperature; (11)Automatic leap year compensation; (12)Operating temperature of –40 to 85℃.

Diagrams

M41T56M6F Logic diagram

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