Product Summary

The MJD3055 is a General Purpose Amplifier. The MJD3055 is designed for: Low Speed Switching Applications and D-PAK for Surface Mount Applications.

Parametrics

MJD3055 absolute maximum ratings: (1)VCBO, Collector-Base Voltage: 70 V; (2)VCEO, Collector-Emitter Voltage: 60 V; (3)VEBO, Emitter-Base Voltage: 5 V; (4)IC, Collector Current: 10 A; (5)IB, Base Current: 6 A; (6)PC, Collector Dissipation (TC=25℃): 20 W; (7)Collector Dissipation (Ta=25℃): 1.75 W; (8)TJ, Junction Temperature: 150 ℃; (9)TSTG, Storage Temperature: - 55 to 150 ℃.

Features

MJD3055 features: (1)Lead Formed for Surface Mount Applications (No Suffix); (2)Straight Lead (I-PAK, -I Suffix); (3)Electrically Similar to Popular MJE3055T; (4)DC Current Gain Specified to 10A; (5)High Current Gain - Bandwidth Product: fT = 2MHz (MIN), IC = 500mA.

Diagrams

MJD3055 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJD3055
MJD3055
ON Semiconductor
Transistors Bipolar (BJT) 10A 60V 20W NPN
Data Sheet
Negotiable 
MJD3055G
MJD3055G
ON Semiconductor
Transistors Bipolar (BJT) 10A 60V 20W NPN
Data Sheet
0-1: $0.44
1-25: $0.39
25-100: $0.29
100-500: $0.25
MJD3055T4
MJD3055T4
STMicroelectronics
Transistors Bipolar (BJT) NPN Gen Pur Switch
Data Sheet
0-1: $0.34
1-10: $0.30
10-100: $0.26
100-500: $0.25
MJD3055TF
MJD3055TF
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN Epitaxial Sil
Data Sheet
0-1: $0.33
1-25: $0.25
25-100: $0.20
100-250: $0.14
MJD3055T4G
MJD3055T4G
ON Semiconductor
Transistors Bipolar (BJT) 10A 60V 20W NPN
Data Sheet
0-1: $0.44
1-25: $0.39
25-100: $0.29
100-500: $0.25