(China (Mainland))
Product Summary
The SPP11N80C3 is a cool MOS power transistor.
Parametrics
SPP11N80C3 absolute maximum ratings: (1)Continuous drain current, TC = 25℃, ID: 11A; (2)Continuous drain current, TC = 100℃, ID: 7.1A; (3)Pulsed drain current, tp limited by Tjmax, ID puls: 33 A; (4)Avalanche energy, single pulse, ID=2.2A, VDD=50V, EAS: 470mJ; (5)Avalanche energy, repetitive tAR limited by Tjmax, ID=11A, VDD=50V, EAR: 0.2mJ; (6)Avalanche current, repetitive tAR limited by Tjmax, IAR: 11A; (7)Gate source voltage VGS: ±20V; (8)Gate source voltage AC (f >1Hz), VGS: ±30V; (9)Power dissipation, TC = 25℃, Ptot: 156W; (10)Operating and storage temperature, Tj, Tstg: -55 to+150℃.
Features
SPP11N80C3 features: (1)New revolutionary high voltage technology; (2)Ultra low gate charge; (3)Periodic avalanche rated; (4)Extreme dv/dt rated; (5)Ultra low effective capacitances; (6)Improved transconductance; (7)P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute).
Diagrams
| Image | Part No | Mfg | Description |  |
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 SPP11N80C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 800V 11A |
Data Sheet |
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