Product Summary

The 04N60C3 is a cool MOS power transistor.

Parametrics

04N60C3 absolute maximum ratings: (1)continuous drain current: 4.5 A at TC=25℃, 2.8 at TC=100℃; (2)pulsed drain current, tp limited by Tjmax: 13.5 A; (3)avalanche energy, single pulse: 130 mJ; (4)avalanche energy, repetitive tAR limited by Tjmax: 0.4 mJ; (5)avalanche current, repetitive tAR limited by Tjmax: 4.5 A; (6)gate source voltage static: ±20 V; (7)gate source voltage AC ( f>1Hz ): ±30 V; (8)power dissipation, TC=25℃: 50 W; (9)operating and storage temperature: -55 to +150 ℃; (10)reverse diode dv/dt: 15 V/ns.

Features

04N60C3 features: (1)new revolutionary high voltage technology; (2)ultra low gate charge; (3)periodic avalanche rated; (4)extreme dv/dt rated; (5)high peak current capability; (6)improved transconductance.

Diagrams

04N60C3 diagram